[I-6-5L] C-band AIGaN/GaN HEMTs with 170W Output Power

Yoshiharu Takadal、Hiroyuki Sakurai、Keiichi Matsushita、Kazutoshi Masuda、Shinji Takatsuka、Masahiko Kuraguchi、Takuma Suzuki、Takashi Suzuki、Mayumi Hirose、Hisao Kawasaki、Kazutaka Takagi、Kunio Tsuda (1.Advanced Electron Devices Laboratory, Corporate R＆D Center, Toshiba Corporation、2.Microwave Solid-state Engineering Dept., Komukai Operations, ToshibaCorporation)

https://doi.org/10.7567/SSDM.2005.I-6-5L