[I-6-5L] C-band AIGaN/GaN HEMTs with 170W Output Power

Yoshiharu Takadal, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (1.Advanced Electron Devices Laboratory, Corporate R＆D Center, Toshiba Corporation, 2.Microwave Solid-state Engineering Dept., Komukai Operations, ToshibaCorporation)

https://doi.org/10.7567/SSDM.2005.I-6-5L