[I-7-1] Simulation of AlGaN/GaN Heterostructure Field Effect Transistors

N. Braga、R. Mickevicius、W. Fichtner、R. Gaska、M. S. Shur、G. Simin、M. Asif Khan (1.Synopsys, Inc.、2.Sensor Electronic Technology Inc.、3.ECSE Department, Rensselaer Polytechnic Institute、4.Dept. of Electrical Engineering, U. of South Carolina)

https://doi.org/10.7567/SSDM.2005.I-7-1