Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate

Hiroyoshi Momida; Tomoyuki Hamada; Takenori Yamamoto; Tsuyoshi Uda; Naoto Umezawa; Kenji Shiraishi; Toyohiro Chikyow; Takahisa Ohno

doi:https://doi.org/10.7567/SSDM.2005.P1-1

[P1-1] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate

Hiroyoshi Momida, Tomoyuki Hamada, Takenori Yamamoto, Tsuyoshi Uda, Naoto Umezawa, Kenji Shiraishi, Toyohiro Chikyow, Takahisa Ohno (1.Institute of Industrial Science, University of Tokyo, 2.AdvanceSoft Corporation, 3.National Institute for Materials Science, 4.Institute of Physics, University of Tsukuba)

https://doi.org/10.7567/SSDM.2005.P1-1

2005 International Conference on Solid State Devices and Materials

[P1-1] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate