Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate

Hiroyoshi Momida; Tomoyuki Hamada; Takenori Yamamoto; Tsuyoshi Uda; Naoto Umezawa; Kenji Shiraishi; Toyohiro Chikyow; Takahisa Ohno

doi:https://doi.org/10.7567/SSDM.2005.P1-1

[P1-1] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate

Hiroyoshi Momida、Tomoyuki Hamada、Takenori Yamamoto、Tsuyoshi Uda、Naoto Umezawa、Kenji Shiraishi、Toyohiro Chikyow、Takahisa Ohno (1.Institute of Industrial Science, University of Tokyo、2.AdvanceSoft Corporation、3.National Institute for Materials Science、4.Institute of Physics, University of Tsukuba)

https://doi.org/10.7567/SSDM.2005.P1-1

2005 International Conference on Solid State Devices and Materials

[P1-1] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate