Composition control of Ni-silicide by CVD using Ni(PF3)4 and Si3H8

Masato Ishikawa; Ikuyo Muramoto; Hideaki Machida; Yoshio Ohsihita; Satoshi IMAI; Atsushi OGURA

doi:https://doi.org/10.7567/SSDM.2005.P1-11

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P1-11] Composition control of Ni-silicide by CVD using Ni(PF3)4 and Si3H8

Masato Ishikawa, Ikuyo Muramoto, Hideaki Machida, Yoshio Ohsihita, Satoshi IMAI, Atsushi OGURA (1.Tri Chemical Laboratories Inc., 2.Toyota Technological Institute, 3.Meiji University)

https://doi.org/10.7567/SSDM.2005.P1-11

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