Gate Stack Integration of Germanium Oxynitride for Germanium MOSFETs

Yu-Lin Chao; Roland Scholz; Jason C. S. Woo

doi:https://doi.org/10.7567/SSDM.2005.P1-15

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P1-15] Gate Stack Integration of Germanium Oxynitride for Germanium MOSFETs

Yu-Lin Chao, Roland Scholz, Jason C. S. Woo (1.Univ. of California, Los Angeles, Dept. of Electrical Engineering, School of Eng., 2.Max-Planck Institute of Microstructure Physics)

https://doi.org/10.7567/SSDM.2005.P1-15

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