Ultra-Shallow p+/n Junction Prepared by Low Energy BF3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing

Dongkyu Lee; Sungkweon Baek; Changhee Cho; Sungho Heo; Hyunsang Hwang

doi:https://doi.org/10.7567/SSDM.2005.P1-22

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P1-22] Ultra-Shallow p+/n Junction Prepared by Low Energy BF3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing

Dongkyu Lee, Sungkweon Baek, Changhee Cho, Sungho Heo, Hyunsang Hwang (1.Gwangju Institute of Science & Technology (GIST), Dept. of Materials Sci. & Eng.)

https://doi.org/10.7567/SSDM.2005.P1-22

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