Effect Of Starting Interface in Scalability/Device Performance of Ultra-Scaled ALD HfSiON/TiN Gate Stacks

M.A. Quevedo-Lopez; S. A. Krishnan; P.D. Kirsch; J. Peterson; H.-J Li; M. Kim; C. Huffman

doi:https://doi.org/10.7567/SSDM.2005.P1-4

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P1-4] Effect Of Starting Interface in Scalability/Device Performance of Ultra-Scaled ALD HfSiON/TiN Gate Stacks

M.A. Quevedo-Lopez, S. A. Krishnan, P.D. Kirsch, J. Peterson, H.-J Li, M. Kim, C. Huffman (1.SEMATECH, 2.Texas Instruments, 3.IBM, 4.Infineon, 5.University of Texas at Dallas)

https://doi.org/10.7567/SSDM.2005.P1-4

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