Photoluminescence characterization of strained Si-SiGe-on-insulator wafers

Dong Wang; Koji Matsumoto; Masahiko Nakamae; Hiroshi Nakashima

doi:https://doi.org/10.7567/SSDM.2005.P2-15L

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P2-15L] Photoluminescence characterization of strained Si-SiGe-on-insulator wafers

Dong Wang, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima (1.Art, Science and Technology Center for Cooperative Research, Kyushu University, 2.SUMCO Corporation)

https://doi.org/10.7567/SSDM.2005.P2-15L

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