[P3-9] Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors

Yiming Li、Shao-Ming Yu、Ching-Feng Hsiao (1.Department of Communication Engineering, National Chiao Tung University、2.Microelectronics and Information Systems Research Center, National Chiao Tung University、3.Department of Computer and Information Science, National Chiao Tung University、4.Institute of Statistics, National Chiao Tung University)

https://doi.org/10.7567/SSDM.2005.P3-9