[P4-13L] Amorphous Channel SESO Memory with Good Logic Process Compatibility for Low-power High-density Embedded RAM

Norifumi Kameshiro、Tomoyuki Ishii、Toshiyuki Mine、Toshiaki Sano、Takao Watanabe (1.Central Research Laboratory, Hitachi, Ltd.、2.Renesas Northern Japan Semiconductor, Inc.)

https://doi.org/10.7567/SSDM.2005.P4-13L