Amorphous Channel SESO Memory with Good Logic Process Compatibility for Low-power High-density Embedded RAM

Norifumi Kameshiro; Tomoyuki Ishii; Toshiyuki Mine; Toshiaki Sano; Takao Watanabe

doi:https://doi.org/10.7567/SSDM.2005.P4-13L

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P4-13L] Amorphous Channel SESO Memory with Good Logic Process Compatibility for Low-power High-density Embedded RAM

Norifumi Kameshiro, Tomoyuki Ishii, Toshiyuki Mine, Toshiaki Sano, Takao Watanabe (1.Central Research Laboratory, Hitachi, Ltd., 2.Renesas Northern Japan Semiconductor, Inc.)

https://doi.org/10.7567/SSDM.2005.P4-13L

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