Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory

Lei Sun; Liyang Pan; Huiqing Pang; Ying Zeng; Zhaojian Zhang; John Chen; Jun Zhu

doi:https://doi.org/10.7567/SSDM.2005.P4-4

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[P4-4] Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory

Lei Sun、Liyang Pan、Huiqing Pang、Ying Zeng、Zhaojian Zhang、John Chen、Jun Zhu (1.Institute of Microelectronics, Tsinghua University、2.Semiconductor Manufacturing International Corporation)

https://doi.org/10.7567/SSDM.2005.P4-4

▲