Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory

Lei Sun; Liyang Pan; Huiqing Pang; Ying Zeng; Zhaojian Zhang; John Chen; Jun Zhu

doi:https://doi.org/10.7567/SSDM.2005.P4-4

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P4-4] Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory

Lei Sun, Liyang Pan, Huiqing Pang, Ying Zeng, Zhaojian Zhang, John Chen, Jun Zhu (1.Institute of Microelectronics, Tsinghua University, 2.Semiconductor Manufacturing International Corporation)

https://doi.org/10.7567/SSDM.2005.P4-4

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