[P6-10] Enhanced fmax and low base resistance in Ni silicided SiGe HBT

Hyun-Cheol Bae, Sang-Hoon Kim, Young-Joo Song, Seong-Wook Yoo, Sang-Heung Lee, Bo-Woo Kim (1.SiGe Device Team, High Speed IC Research Department Electronics and Telecommunications Research Institute)

https://doi.org/10.7567/SSDM.2005.P6-10