[P6-10] Enhanced fmax and low base resistance in Ni silicided SiGe HBT

Hyun-Cheol Bae、Sang-Hoon Kim、Young-Joo Song、Seong-Wook Yoo、Sang-Heung Lee、Bo-Woo Kim (1.SiGe Device Team, High Speed IC Research Department Electronics and Telecommunications Research Institute)

https://doi.org/10.7567/SSDM.2005.P6-10