The Japan Society of Applied Physics

[P6-13] Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)

Po-Hsien Lai、Ssu-I Fu、Yan-Ying Tsai、Chih-Hung Yen、Chung-I Kao、Chun-Wei Chen、Wen-Chau Liu (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University)

https://doi.org/10.7567/SSDM.2005.P6-13