Origin of Frequency Dependence in Drain Conductance of InAIAs/InGaAs HEMTs

Hirohisa Taguchi; Maki Hayakawa; Yuki Nakamura; Tsutomu Iida; Yoshifumi Takanashi

doi:https://doi.org/10.7567/SSDM.2005.P6-3

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[P6-3] Origin of Frequency Dependence in Drain Conductance of InAIAs/InGaAs HEMTs

Hirohisa Taguchi、Maki Hayakawa、Yuki Nakamura、Tsutomu Iida、Yoshifumi Takanashi (1.Department of Materials Science and Technology, Faculty of Industrial Science and Technology Tokyo University of Science)

https://doi.org/10.7567/SSDM.2005.P6-3

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