High Brightness InGaN/GaN LEDs with ESD Protection

Shih-Chang Shei; Chia-Sheng Chang; Shoou-Jinn Chang; Yan-Kuin Su

doi:https://doi.org/10.7567/SSDM.2005.P7-5

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[P7-5] High Brightness InGaN/GaN LEDs with ESD Protection

Shih-Chang Shei、Chia-Sheng Chang、Shoou-Jinn Chang、Yan-Kuin Su (1.South Epitaxy Corporation、2.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University)

https://doi.org/10.7567/SSDM.2005.P7-5

▲