Quantum Dot Formation by Post-Growth Annealing of a Wetting Layer

H. Z. SONG; T. Usuki; Y. Nakata; N. Yokoyama; H. Sasakura; S. Muto

doi:https://doi.org/10.7567/SSDM.2005.P8-12L

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[P8-12L] Quantum Dot Formation by Post-Growth Annealing of a Wetting Layer

H. Z. SONG、T. Usuki、Y. Nakata、N. Yokoyama、H. Sasakura、S. Muto (1.Nanotechnology Research Center, Fujitsu Lab. Ltd.、2.CREST, Japan Science and Technology Agency、3.Department of Applied Physics, Hokkaido University)

https://doi.org/10.7567/SSDM.2005.P8-12L

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