[P8-3] High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD

Takuya Wakamiya、Hiromasa Ohmi、Hiroaki Kakiuchi、Heiji Watanabe、Kiyoshi Yasutake、Kumayasu Yoshii、Yuzo Mori (1.Department of Precision Science and Technology, Graduate School of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2005.P8-3