Precise Control of Growth of VCSEL Structure by using MBE in-Situ Reflectance Monitor

M. Mizutani; F. Teramae; K. Takeuchi; T. Murase; S. Naritsuka; T. Maruyama

doi:https://doi.org/10.7567/SSDM.2005.P8-7

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[P8-7] Precise Control of Growth of VCSEL Structure by using MBE in-Situ Reflectance Monitor

M. Mizutani, F. Teramae, K. Takeuchi, T. Murase, S. Naritsuka, T. Maruyama (1.Materials Science & Engineering, Meijo Univ., 2.Meijo Univ. 21st CENTURY COE program “NANO FACTORY”)

https://doi.org/10.7567/SSDM.2005.P8-7

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