Fabrication of nanoscaled-schottky diodes based on metal silicide/silicon nanowire with scanning probe lithography and Wet etching and its electrical characterization

J. T. Sheu; S. P. Yeh; S. T. Tsai; C. H. Lien

doi:https://doi.org/10.7567/SSDM.2005.P9-4

[P9-4] Fabrication of nanoscaled-schottky diodes based on metal silicide/silicon nanowire with scanning probe lithography and Wet etching and its electrical characterization

J. T. Sheu、S. P. Yeh、S. T. Tsai、C. H. Lien (1.Institute of Nanotechnology, National Chaio Tung University、2.Institute of Electrical Engineering, National Tsing Hua University、3.Department of Electrical Engineering, National Chi Nan University)

https://doi.org/10.7567/SSDM.2005.P9-4

2005 International Conference on Solid State Devices and Materials

[P9-4] Fabrication of nanoscaled-schottky diodes based on metal silicide/silicon nanowire with scanning probe lithography and Wet etching and its electrical characterization