[A-9-3] Low Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-bar Devices

Kei Takashina, Benjamin Gaillard, Yukinori Ono, Yoshiro Hirayama (1.NTT Basic Research Laboratories, NTT Corporation, 2.SORST-JST)

https://doi.org/10.7567/SSDM.2006.A-9-3