High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)

Y. P. Hsu; S. J. Chang; Y. K. Su; W. S. Chen; J. K. Sheu; J. Y. Chu; C. T. Kuo

doi:https://doi.org/10.7567/SSDM.2006.B-3-1

[B-3-1] High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)

Y. P. Hsu、S. J. Chang、Y. K. Su、W. S. Chen、J. K. Sheu、J. Y. Chu、C. T. Kuo (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University、2.Institute of Electro-Optical Science and Engineering National Cheng Kung University、3.Epitech Technology Corporation)

https://doi.org/10.7567/SSDM.2006.B-3-1

2006 International Conference on Solid State Devices and Materials

[B-3-1] High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)