High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)

Y. P. Hsu; S. J. Chang; Y. K. Su; W. S. Chen; J. K. Sheu; J. Y. Chu; C. T. Kuo

doi:https://doi.org/10.7567/SSDM.2006.B-3-1

[B-3-1] High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)

Y. P. Hsu, S. J. Chang, Y. K. Su, W. S. Chen, J. K. Sheu, J. Y. Chu, C. T. Kuo (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University, 2.Institute of Electro-Optical Science and Engineering National Cheng Kung University, 3.Epitech Technology Corporation)

https://doi.org/10.7567/SSDM.2006.B-3-1

2006 International Conference on Solid State Devices and Materials

[B-3-1] High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)