[C-3-2] Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric SixN MOSFET

Mari Matsumoto、Ryuji Ohba、Shinichi Yasuda、Ken Uchida、Tetsufumi Tanamoto、Shinobu Fujita (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.C-3-2