Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric SixN MOSFET

Mari Matsumoto; Ryuji Ohba; Shinichi Yasuda; Ken Uchida; Tetsufumi Tanamoto; Shinobu Fujita

doi:https://doi.org/10.7567/SSDM.2006.C-3-2

2006 International Conference on Solid State Devices and Materials

Sep 12, 2006 - Sep 15, 2006
PACIFICO Yokohama, Yokohama, Japan

[C-3-2] Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric SixN MOSFET

Mari Matsumoto, Ryuji Ohba, Shinichi Yasuda, Ken Uchida, Tetsufumi Tanamoto, Shinobu Fujita (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.C-3-2

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