[C-6-3] Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O2/NO Plasma Oxynitridation

Tomoyuki Suwa、Hiroto Takahashi、Yuki Kumagai、Genya Fujita、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University、2.Graduate School of Engineering Tohoku University)

https://doi.org/10.7567/SSDM.2006.C-6-3