Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures

Kazushi Nakazawa; Hiroaki Ueno; Hisayoshi Matsuo; Manabu Yanagihara; Yasuhiro Uemoto; Tetsuzo Ueda; Tsuyoshi Tanaka

doi:https://doi.org/10.7567/SSDM.2006.E-10-2

[E-10-2] Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures

Kazushi Nakazawa、Hiroaki Ueno、Hisayoshi Matsuo、Manabu Yanagihara、Yasuhiro Uemoto、Tetsuzo Ueda、Tsuyoshi Tanaka (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2006.E-10-2

2006 International Conference on Solid State Devices and Materials

[E-10-2] Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures