[E-10-3] High Critical Electric Field Exceeding 8 MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate

Atsushi Nishikawa、Kazuhide Kumakura、Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2006.E-10-3