[E-2-4] Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs

Tadayoshi Deguchi、Meiichi Yamashita、Eiji Waki、Atsushi Nakagawa、Hiroyasu Ishikawa、Takashi Egawa (1.Research Laboratory, New Japan Radio Co., Ltd.、2.Research Center for Nano-Device and System, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2006.E-2-4