Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFET

Tetsuya Ikuta; Yuki Miyanami; Shigeru Fujita; Hayato Iwamoto; Shingo Kadomura

doi:https://doi.org/10.7567/SSDM.2006.E-5-1

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜 2006年9月15日
PACIFICO Yokohama, Yokohama, Japan

[E-5-1] Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFET

Tetsuya Ikuta、Yuki Miyanami、Shigeru Fujita、Hayato Iwamoto、Shingo Kadomura (1.Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation)

https://doi.org/10.7567/SSDM.2006.E-5-1

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