[E-5-1] Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFET
Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura
(1.Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation)
https://doi.org/10.7567/SSDM.2006.E-5-1
