[E-6-3] Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy

Masayasu Nishizawa、Leonid Bolotov、Toshihiko Kanayama (1.MIRAI-Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2006.E-6-3