[F-2-2] A Highly Reliable MIM Technology with non-Crystallized HfOx Dielectrics Using Novel MOCVD Stacked TiN Bottom Electrodes

Takashi Ohtsuka、Yoshiyuki Shibata、Hideyuki Arai、Hideo Ichimura、Seiji Matsuyama、Keita Uchiyama、Jun Suzuki、Akihiko Tsuzumitani、Kenji Yoneda、Yukiko Hashimoto、Takashi Nakabayashi、Eiji Fujii (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.、2.The Engineering Department, Panasonic Semiconductor Engineering Co., Ltd.)

https://doi.org/10.7567/SSDM.2006.F-2-2