Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI

Y. Maki; Y. Hirano; M. Tsujiuchi; T. Iwamatsu; O. Ozawa; T. Ipposhi; Y. Inoue

doi:https://doi.org/10.7567/SSDM.2006.F-5-2

[F-5-2] Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI

Y. Maki, Y. Hirano, M. Tsujiuchi, T. Iwamatsu, O. Ozawa, T. Ipposhi, Y. Inoue (1.Process Technology Development Div. Renesas Technology Corp., 2.SoC Design Technology Div. Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2006.F-5-2

2006 International Conference on Solid State Devices and Materials

[F-5-2] Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI