Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI

Y. Maki; Y. Hirano; M. Tsujiuchi; T. Iwamatsu; O. Ozawa; T. Ipposhi; Y. Inoue

doi:https://doi.org/10.7567/SSDM.2006.F-5-2

[F-5-2] Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI

Y. Maki、Y. Hirano、M. Tsujiuchi、T. Iwamatsu、O. Ozawa、T. Ipposhi、Y. Inoue (1.Process Technology Development Div. Renesas Technology Corp.、2.SoC Design Technology Div. Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2006.F-5-2

2006 International Conference on Solid State Devices and Materials

[F-5-2] Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI