[F-7-1] The incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices

Moon Sig Joo, Seung Ryong Lee, Hongseon Yang, Kwon Hong, Se-Aug Jang, Jaehyoung Koo, Jaemun Kim, Seungwoo Shin, Myungok Kim, Seungho Pyi, Nojung Kwak, Jin-Woong Kim (1.R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2006.F-7-1