[F-7-1] The incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices

Moon Sig Joo、Seung Ryong Lee、Hongseon Yang、Kwon Hong、Se-Aug Jang、Jaehyoung Koo、Jaemun Kim、Seungwoo Shin、Myungok Kim、Seungho Pyi、Nojung Kwak、Jin-Woong Kim (1.R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2006.F-7-1