[F-7-5L] Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories

Wook-Hyun Kwon、Jung Guen Jee、Jee Hoon Han、Jung In Han、Heon Kyu Lee、Bong Yong Lee、Sang-Pil Sim、Chan- Kwang Park、Kinam Kim (1.Advanced Technology Development Team2, Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.)

https://doi.org/10.7567/SSDM.2006.F-7-5L