[F-9-4] Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs

Takamitsu Ishihara、Ryosuke Iijima、Mariko Takayanagi、Hiroyoshi Tanimoto、Masato Koyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center、2.Advanced CMOS Technology Dept., Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2006.F-9-4