[G-2-5] Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices

Yoshihiro Miyagawa, Tatunori Murata, Yukiko Nishida, Takehiro Nakai, Akira Uedono, Nobuyoshi Hattori, Masazumi Matsuura, Koyu Asai, Masahiro Yoneda (1.Process Technology Development Division, Renesas Technology Corp., 2.Institute of Applied Physics, University of Tsukuba)

https://doi.org/10.7567/SSDM.2006.G-2-5