[H-10-2] Threshold Voltage Instability of 45-nm-node Poly-Si- or FUSI-Gated SRAM Transistors Caused by Dopant Lateral Diffusion in Poly-Si

Kimihiko Hosaka、Takayuki Aoyama、Kunihiro Suzuki (1.FUJITSU LABORATORIES LTD.)

https://doi.org/10.7567/SSDM.2006.H-10-2