[H-10-3] Novel threshold voltage fine control method for FETs within a wafer using LDSi (Locally Differentiated Scanning ion implant)

Kyoung Bong Rouh、Min Yong Lee、Seung woo Jin、Yong Sun Sohn、Yong Soo Joung、Young Jong Ki、Il Keun Han、Yong Wook Song、sung wook Park (1.R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2006.H-10-3