Analytical Model for Phonon-Limited Mobility in n-MOS Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces

Melanie Szczap; Nicolas Cavassilas; Frederic Boeuf; Fabrice Payet; Thomas Skotnicki

doi:https://doi.org/10.7567/SSDM.2006.H-9-4

[H-9-4] Analytical Model for Phonon-Limited Mobility in n-MOS Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces

Melanie Szczap、Nicolas Cavassilas、Frederic Boeuf、Fabrice Payet、Thomas Skotnicki (1.L2MP, CNRS, UMR 6137, Bat. IRPHE, Technopole de Chateau-Gombert、2.STMicroelectronics)

https://doi.org/10.7567/SSDM.2006.H-9-4

2006 International Conference on Solid State Devices and Materials

[H-9-4] Analytical Model for Phonon-Limited Mobility in n-MOS Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces