Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si

Kyung-Hwa Park; Kazuhiko Hirakawa; Shinichi Takagi

doi:https://doi.org/10.7567/SSDM.2006.H-9-5

[H-9-5] Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si

Kyung-Hwa Park、Kazuhiko Hirakawa、Shinichi Takagi (1.Institute of Industrial Science, University of Tokyo、2.Graduate School of Frontier Science, University of Tokyo)

https://doi.org/10.7567/SSDM.2006.H-9-5

2006 International Conference on Solid State Devices and Materials

[H-9-5] Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si