The Japan Society of Applied Physics

[I-2-1] Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A Substrate

J. Nishinaga, R. Harada, T. Takada, A. Kawaharazuka, Y. Horikoshi (1.School of Science and Engineering, Waseda University, 2.Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 3.Institute for Biomedical Engineering, ASMeW, Waseda University)

https://doi.org/10.7567/SSDM.2006.I-2-1