Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A Substrate

J. Nishinaga; R. Harada; T. Takada; A. Kawaharazuka; Y. Horikoshi

doi:https://doi.org/10.7567/SSDM.2006.I-2-1

[I-2-1] Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A Substrate

J. Nishinaga、R. Harada、T. Takada、A. Kawaharazuka、Y. Horikoshi (1.School of Science and Engineering, Waseda University、2.Kagami Memorial Laboratory for Materials Science and Technology, Waseda University、3.Institute for Biomedical Engineering, ASMeW, Waseda University)

https://doi.org/10.7567/SSDM.2006.I-2-1

2006 International Conference on Solid State Devices and Materials

[I-2-1] Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A Substrate